最終更新日：2025/11/23
For MOCVD growth of compound semiconductor layers for optoelectronic devices, DIPTe has long been the preferred tellurium source because of its favorable volatility and clean decomposition.
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For MOCVD growth of compound semiconductor layers for optoelectronic devices, DIPTe has long been the preferred tellurium source because of its favorable volatility and clean decomposition.
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