Last Updated：2025/12/20
Sentence
The
isolated
disordered
regions
and
the
amorphous
layer
have
widely
different
anneal
behavior.
In
the
case
of
germanium
and
silicon,
the
isolated
disordered
regions
anneal
at
moderate
temperatures
of
approximately
200°
and
300°
C,
respectively.
The
amorphous
layers
also
anneal
in
a
characteristic
fashion,
but
at
appreciably
higher
temperatures,
i.e.,
at
approximately
600°
C
in
silicon
and
400°
C
in
germanium.
Quizzes for review
The isolated disordered regions and the amorphous layer have widely different anneal behavior. In the case of germanium and silicon, the isolated disordered regions anneal at moderate temperatures of approximately 200° and 300° C, respectively. The amorphous layers also anneal in a characteristic fashion, but at appreciably higher temperatures, i.e., at approximately 600° C in silicon and 400° C in germanium.
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