Last Updated：2022/12/24
Furthermore, due to the strong photogating effect, these direct-band gap, multi-layer phototransistors produce ultra-high gains of (9.8 +- 2.5) x 104 A/W and inferred detectivities of (3.3 +- 0.8) x 1013 Jones, putting In2Se3 amongst the most sensitive 2D materials for photodetection studied to date..
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Furthermore,
due
to
the
strong
photogating
effect,
these
direct-band
gap,
multi-layer
phototransistors
produce
ultra-high
gains
of
(9.8
+-
2.5)
x
10^4
A/W
and
inferred
detectivities
of
(3.3
+-
0.8)
x
10^13
Jones,
putting
In2Se3
amongst
the
most
sensitive
2D
materials
for
photodetection
studied
to
date..
