Last Updated:2025/11/21

To maximize carrier mobility, we grew a single crystal of silicon under controlled conditions to prevent secondary nucleation and grain boundary formation.

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To maximize carrier mobility, we grew a single crystal of silicon under controlled conditions to prevent secondary nucleation and grain boundary formation.

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キャリア移動度を最大化するために、二次核生成や粒界の発生を防ぐよう制御された条件下で単結晶シリコンを成長させました。

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